A novel Field Effect Photodiode to control the output photocurrent and fast optical switching

This paper presents a novel device called Field Effect Photodiode (FEPD) to overcome the inherent drawbacks of PIN (PIN-PD) and control output photocurrent. Also, proposed PIN-PD can be applied as fast optical switch that provides desired ION/IOFF ratio for applications in nanoscale regime. The combines Metal Semiconductor Transistor (MESFET) regular convert incident light with photon energy greater than semiconductor’s bandgap regulated photocurrent by changing gates bias which mounted over absorption region. significant parameters such: responsivity, current both ON OFF states, dark current, play key roles have been extracted. To extract illustrate electrical results FEPD this work, we used TCAD tools semiconductor simulator.